Indium-induced changes in GaN„0001... surface morphology
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چکیده
First-principles calculations of the energetics of the In-terminated GaN~0001!, (0001I ), (101I 1), and (1011) surfaces indicate that In has a substantial effect on the relative energies of formation of these surfaces. Indium-induced changes in the surface energetics enable the formation of inverted hexagonal pyramid defects having (101I 1) facets at the termination of threading defects on the ~0001! surface of pseudomorphic InxGa12xN films. For dislocations terminating on the InxGa12xN(0001I ) surface, the calculations predict that large (1011) faceted defects are not energetically favorable. @S0163-1829~99!52036-5#
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تاریخ انتشار 1999